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Volume 16 Issue 4
Sep.  2013
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Article Navigation >  LASER TECHNOLOGY  > 1992 >  16(4): 206-209

Citation:
shu

1.3μm travelling-wave semiconductor laser amplifier

  • 1.

    Department of Optoelectronics Science and Technology, Sichuan University

  • Received Date: 1992-01-24
  • With the aid of multi-step trials,the active monitoring method adopted to control the deposition of the AR coatings on the facets of the semiconductor lasers has been optimized.As a result,a travelling-wave semiconductor amplifier with an average facet reflectivity of less than 3×10-4 has been obtained,and 20dB signal gain at 1.3μm has been observed.
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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1.3μm travelling-wave semiconductor laser amplifier

  • 1. Department of Optoelectronics Science and Technology, Sichuan University
  • Received Date: 1992-01-24
  • Available Online: 1992-07-25

Abstract: With the aid of multi-step trials,the active monitoring method adopted to control the deposition of the AR coatings on the facets of the semiconductor lasers has been optimized.As a result,a travelling-wave semiconductor amplifier with an average facet reflectivity of less than 3×10-4 has been obtained,and 20dB signal gain at 1.3μm has been observed.

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