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Volume 16 Issue 2
Sep.  2013
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Article Navigation >  LASER TECHNOLOGY  > 1992 >  16(2): 76-80

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A new method of monitoring the in-situ residual reflectivity of antireflection coating

  • 1.

    Huazhong University of Science and Technology

  • Received Date: 1991-08-13
  • A new method of monitoring the in-situ extremely low residual reflectivity of antireflection (AR) coating of travelling-wave semiconductor laser amplifier (TW-SLA) is presented. The relations among the residual reflectivity, temperature and the output power of SLA are analyzed theoretically and experimentally. Minimum reflectivity less than 5×10-4 can be realized by means of using a 1.3μm InGaAsP/InP buried-hetero-structure (BH) laser diode coated with single-layer SiOx or double-lager SiOx1/SiOx2 film.
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  • [1]

    Mukai T,Yamamtot Y, Optical direct amplification for fibre transmission.Rev Elect Common Lab, 1983f 3 (3):340-348
    [2]

    Simon J C, Semiconductor laser amplifier for single-mode optical fibre communication, J Opt Common,1983s 4 (2):51-56
    [3]

    O'Mahony M J, Marshall I W. An opticl repeater using a semicon-doctor laser amplifier, 3rd Int Conference on Telecommunication Tranamission.London; 1985: 159-161
    [4]

    Weatlake H J, Adams M J, O'Mahony M J.Optical bistability measurements on a 1.5μm semiconductor laser amplifier, CLEO'85,Baltimore; 1985
    [5]

    Kressel H, Butler J K. Semiconductor lasers and heterojunction LEDs, 1977
    [6]

    Kaminow I P, Eisenetein G,Stulz L W. Measurements of the model reflectivity of an antireflection coating on a super-luminesent diode, IEEE J Q E,1983s QE-19: 493
    [7] 黄德修.半导体光电子学.成都:电子科技大学出版社,1989
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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A new method of monitoring the in-situ residual reflectivity of antireflection coating

  • 1. Huazhong University of Science and Technology
  • Received Date: 1991-08-13
  • Available Online: 1992-03-25

Abstract: A new method of monitoring the in-situ extremely low residual reflectivity of antireflection (AR) coating of travelling-wave semiconductor laser amplifier (TW-SLA) is presented. The relations among the residual reflectivity, temperature and the output power of SLA are analyzed theoretically and experimentally. Minimum reflectivity less than 5×10-4 can be realized by means of using a 1.3μm InGaAsP/InP buried-hetero-structure (BH) laser diode coated with single-layer SiOx or double-lager SiOx1/SiOx2 film.

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