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Volume 15 Issue 3
Sep.  2013
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Citation:
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CO2 laser chemical vapor deposition of a-Si：H film

  • 1.

    Department of Optical Instrument Engineering, Zhejiang University

  • Received Date: 1990-06-05
    Accepted Date: 1991-01-29
  • Amorphous hydrogenated silicon (a-Si:H) film have been produced by laser chemical vapor deposition, there a 50W CO2 laser is used to excite silane (SiH4). Deposition rate up to 200/min is achieved. The films are confirmed to be amorphous. The ratio of measured photo-conductivity and dark-conductivity of the films reaches 104 orders of magnitudes visible spectroscopic techniques. Value of optical gap is of 1.44~2.00eV. Deposition rate, photo-conductivity,dark-conductivity and optical gap, as the function of substrate temperature,are obtained. The chemical vapor deposition mechanism of a-Si:H film is described.
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  • [1]

    Bileachi R,Gianinoni I,Musci M,J A P,1982,53(9).6479
    [2]

    Taniguchi M,Hirose M,Osaka Y,J Grystal Growth,1988,45;126
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    Barna A et al,Phys Stat Sol (A),1977,41:81
    [4] 陈枉清,衷加勇,赵方毅et al,激光与红外,1987;17 (12):29
    [5]

    Smith Jr J E,Brodsky M H,Crowder B L,Phys Rev Lett,1971;26 (11):642
    [6] 毛友德.非晶态丰导体.上海:上海交通大学出版社,1986
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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CO2 laser chemical vapor deposition of a-Si：H film

  • 1. Department of Optical Instrument Engineering, Zhejiang University
  • Received Date: 1990-06-05
  • Accepted Date: 1991-01-29
  • Available Online: 1991-05-25

Abstract: Amorphous hydrogenated silicon (a-Si:H) film have been produced by laser chemical vapor deposition, there a 50W CO2 laser is used to excite silane (SiH4). Deposition rate up to 200/min is achieved. The films are confirmed to be amorphous. The ratio of measured photo-conductivity and dark-conductivity of the films reaches 104 orders of magnitudes visible spectroscopic techniques. Value of optical gap is of 1.44~2.00eV. Deposition rate, photo-conductivity,dark-conductivity and optical gap, as the function of substrate temperature,are obtained. The chemical vapor deposition mechanism of a-Si:H film is described.

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