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Volume 13 Issue 2
Sep.  2013
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Citation:
shu

The linewidth of an external cavity semiconductor laser

  • 1.

    Department of Electronics, Zhengzhou University

  • Received Date: 1986-09-16
  • The linewidth of an external cavity semiconductor laser(LD) is presented quantum-mechanically.The best feedback conditions are given for the suppression of LD linewidth.
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  • [1]

    J,Lightwave Technol,1987,Vol.LT-5,No.4,P.633.
    [2] 杨恩泽等,《光纤数字通信接收机》,人民邮电出版社,1984年,第164页.
    [3]

    J,Lightwave Technol,1984,Vol.LT-2,P.1024.
    [4]

    J,Lightweve Technol,1987,Vol.LT-5,P;414.
    [5] 《电子学报》,1987年,第15卷,第4期,第62页.
    [6] 《中国激光》,1987年,第14卷,第9期,第529页.
    [7]

    IEEE J,Q,E,1984,Vol.QE-20,P.1023.
    [8]

    IEEE J,Q,E,1983,Vol.QE-19,P.34.
    [9]

    Z.Phys,1967,Vol.204,P.262.
    [10]

    IFFF J.Q.E,1982.Vol.QE-18,P.259.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The linewidth of an external cavity semiconductor laser

  • 1. Department of Electronics, Zhengzhou University
  • Received Date: 1986-09-16
  • Available Online: 1989-03-25

Abstract: The linewidth of an external cavity semiconductor laser(LD) is presented quantum-mechanically.The best feedback conditions are given for the suppression of LD linewidth.

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