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Volume 11 Issue 2
Sep.  2013
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An Investigation for the steady state characteristics of buried crescent InGaAsP/InP laser

  • Received Date: 1986-10-26
  • The steady state characteristcs for buried crescent InGaAsP/InP laser are investigated by effective refraction index method and numerical method. The carrier distribution for various structure parameters and the relationship between threshold current and structure parameters are given.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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An Investigation for the steady state characteristics of buried crescent InGaAsP/InP laser

  • 1. Changchun Optics and Fine Mechanism College

Abstract: The steady state characteristcs for buried crescent InGaAsP/InP laser are investigated by effective refraction index method and numerical method. The carrier distribution for various structure parameters and the relationship between threshold current and structure parameters are given.

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