Finite element simulation of damage characteristics of CCD detectors under single-laser-pulse irradiation
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School of Instrumentation Science & Optoelectronic Engineering, Beijing Information Science & Technology University, Beijing 100192, China
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Corresponding author:
NIU Chunhui, 13520185497@163.com
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Received Date:
2015-07-17
Accepted Date:
2015-09-14
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Abstract
In order to explore the damage mechanism of charge-coupled device (CCD) detectors under laser irradiation, CCD detectors irradiated by pulsed laser were analyzed theoretically and verified experimentally based on the finite element method. Damage mechanism of CCD detectors irradiated by laser was described and simulation model of thermal effect of CCD detectors irradiated by laser was designed. Simulation calculation was carried out for thermal effect of silicon CCD detectors irradiated by high power laser at wavelength of 532nm by using finite element method. Temperature curve of silicon electrodes and time threshold of silicon electrode damage were obtained. After calculation, the corresponding laser damage threshold for CCD detector was about 220mJ/cm2. Simulation result shows that damage threshold decreases with the increase of laser power density and but it changes slightly. When multi-millisecond pulse laser irradiates CCD detectors, detector temperature returns to the ambient temperature before the next pulse and after the former pulse. The model can accurately simulate the thermal damage effect of CCD detectors under single laser pulse irradiation.
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