Research of hot wire chemical vapor deposition and micro-structure of a-SiNx:H thin film

ZHANG Na; ZHOU Bingqing; ZHANG Linrui; LU Xiaocui

doi:10.7510/jgjs.issn.1001-3806.2016.03.024

In order to study the effect of hot wire temperature on the properties of a-SiNx:H thin films, by using hot wire chemical vapor deposition method and using SiH4, NH3, H2 as reaction gas source, a-SiNx:H films were deposited by changing the temperature of hot wire. Film luminescent properties, microstructure and bonding characteristics were gotten and analyzed in detail by means of measurement methods such as ultraviolet-visible optical absorption spectroscopy, Fourier transform infrared transmission spectroscopy, and photoluminescence spectrum. The results show that, when wire temperature is at 1645℃, H content reaches greatest, N content is extremely small, film has high refractive index and a large degree of order. When the wire temperature is at 1713℃, H content decreases, N content reaches extremes. And then, with the increase of hot wire temperature, N content decreases and internal defect intensity increases. The results show that the best value of hot filament temperature is between 1596℃ to 1680℃ and the refractive index of film is 2.0. The film, with full nitrogen and hydrogen contents and stable structure and characteristics, is suit to choose as silicon-based solar cell antireflection film.

Research of hot wire chemical vapor deposition and micro-structure of a-SiNx:H thin film

Corresponding author: ZHOU Bingqing, zhoubq@imnu.edu.cn;

1. Key Laboratory of Physics and Chemistry for Functional Material, College of Physics and Electron Information, Inner Mongolia Normal University, Huhhot 010022, China

Received Date: 2015-03-26

Accepted Date: 2015-05-11

Available Online: 2016-05-25

Abstract: In order to study the effect of hot wire temperature on the properties of a-SiNx:H thin films, by using hot wire chemical vapor deposition method and using SiH4, NH3, H2 as reaction gas source, a-SiNx:H films were deposited by changing the temperature of hot wire. Film luminescent properties, microstructure and bonding characteristics were gotten and analyzed in detail by means of measurement methods such as ultraviolet-visible optical absorption spectroscopy, Fourier transform infrared transmission spectroscopy, and photoluminescence spectrum. The results show that, when wire temperature is at 1645℃, H content reaches greatest, N content is extremely small, film has high refractive index and a large degree of order. When the wire temperature is at 1713℃, H content decreases, N content reaches extremes. And then, with the increase of hot wire temperature, N content decreases and internal defect intensity increases. The results show that the best value of hot filament temperature is between 1596℃ to 1680℃ and the refractive index of film is 2.0. The film, with full nitrogen and hydrogen contents and stable structure and characteristics, is suit to choose as silicon-based solar cell antireflection film.

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Reference (15)

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Research of hot wire chemical vapor deposition and micro-structure of a-SiNx:H thin film

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