Simulation of temperature field of graphene substrate fabricated by laser chemical vapor deposition

CHEN Yongqing; ZHANG Chentao; ZHANG Jianhuan

doi:10.7510/jgjs.issn.1001-3806.2015.05.013

In order to analyze the relationship between static and dynamic temperature field distribution of catalyst substrate and various experimental parameters in graphene fabrication with laser-induced chemical vapor deposition, the finite element model was established by using ANSYS software and 532nm laser model was loaded as the heat source. The data of temperature field distribution and the needing time for achieving reaction temperature under different parameters were obtained. The results show that under the influence of the property of substrate, laser power, the size of substrate area, the focus spot diameter and the reaction gas flow, the substrate temperature field distribution and the needing time for achieving reaction temperature are different. It can be used as the reference in high quality graphene fabrication experiment. The dynamic temperature field distribution under the conditions of continuous wave laser(wavelength of 532nm, power of 3W, focused spot diameter of 50m, movement speed of 1mm/s), nickel foil substrate, 10mL/min methane and 5mL/min hydrogen conforms to the pattern graphene growth mechanism fabricated by laser chemical vapor deposition.

Simulation of temperature field of graphene substrate fabricated by laser chemical vapor deposition

Corresponding author: ZHANG Jianhuan, aeolus@xmu.edu.cn

1. Department of Mechanical and Electrical Engineering, School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China

Received Date: 2014-12-01

Accepted Date: 2014-12-24

Available Online: 2015-09-25

Abstract: In order to analyze the relationship between static and dynamic temperature field distribution of catalyst substrate and various experimental parameters in graphene fabrication with laser-induced chemical vapor deposition, the finite element model was established by using ANSYS software and 532nm laser model was loaded as the heat source. The data of temperature field distribution and the needing time for achieving reaction temperature under different parameters were obtained. The results show that under the influence of the property of substrate, laser power, the size of substrate area, the focus spot diameter and the reaction gas flow, the substrate temperature field distribution and the needing time for achieving reaction temperature are different. It can be used as the reference in high quality graphene fabrication experiment. The dynamic temperature field distribution under the conditions of continuous wave laser(wavelength of 532nm, power of 3W, focused spot diameter of 50m, movement speed of 1mm/s), nickel foil substrate, 10mL/min methane and 5mL/min hydrogen conforms to the pattern graphene growth mechanism fabricated by laser chemical vapor deposition.

HTML

Reference (19)

[1]	EDA G, NATHAN A, WOBKENBERG P, et al.Graphene oxide gate dielectric for graphene-based monolithic field effect transistors[J]. Applied Physics Letters, 2013, 102(13): 133108.
[2]	REN W C, GAO L B, MA L P, et al. Preparation of graphene by chemical vapor deposition[J].New Carbon Materials, 2011,26(1):71-80(in Chinese).
[3]	FERRARI A C, BASKO D M. Raman spectroscopy as a versatile tool for studying the properties of graphene[J]. Nature Nanotechnology, 2013, 8(4): 235-246.
[4]	PINER R, LI H, KONG X, et al. Graphene synthesis via magnetic inductive heating of copper substrates[J]. American Chemical Society Nano, 2013, 7(9): 7495-7499.
[5]	KIM T Y, JUNG G, YOO S, et al. Activated graphene-based carbons as supercapacitorelectrodes with macro-and mesopores[J]. American Chemical Society Nano, 2013, 7(8): 6899-6905.
[6]	GEORGIOU T, JALIL R, BELLE B D, et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics[J]. Nature Nanotechnology, 2013, 8(2): 100-103.
[7]	KUILA T, MISHRA A K, KHANRA P, et al. Recent advances in the efficient reduction of graphene oxide and its application as energy storage electrode materials[J]. Nanoscale, 2013, 5(1): 52-71.
[8]	NOVOSELOV K S, GEIM A K, MORZOV S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 2004, 306(5696): 666-669.
[9]	SHEN B, LU D, ZHAI W, et al. Synthesis of graphene by low-temperature exfoliation and reduction of graphite oxide under ambient atmosphere[J]. Journal of Materials Chemistry, 2013, 1(1): 50-53.
[10]	KORKUT H, KORKUT T. Evaluation of 500keV proton irradiation of bilayer graphene on SiC by the use of SRIM code, a Monte Carlo simulation method for stopping and range of ions in matter[J]. Journal of Radioanalytical and Nuclear Chemistry, 2014, 299(1): 13-17.
[11]	MA L P, REN W C, DONG Z L, et al. Progress of graphene growth on copper by chemical vapor deposition:growth behavior and controlled synthesis[J]. Chinese Science Bullection, 2012, 57(23):2158-2163(in Chinese).
[12]	EL-KADY M F, KANER R B. Direct laser writing of graphene electronics[J]. American Chemical Society Nano, 2014, 8(9): 8725-8729.
[13]	HOSOYA N, TANIMURA M, TACHIBANA M. Effect of laser irradiation on few-layer graphene in air probed by Raman spectroscopy[J]. Transactions of the Materials Research Society of Japan, 2013, 38(4): 579-583.
[14]	PARK J B, XIONG W, GAO Y, et al. Fast growth of graphene patterns by laser direct writing[J]. Applied Physics Letters,2011, 98(12): 123109.
[15]	CHEN Y J, GUO Z N, LIAN H S.Finite element simulation and experimental study about laser micro-joining between biopolymer and metal[J].Laser Technology, 2013, 37(6):760-765(in Chinese).
[16]	SU Y X. Heat transfer[M]. Wuhan: Huazhong University of Science and Technology Press, 2009:39-44(in Chinese).
[17]	LI X, CAI W, COLOMBO L, et al. Evolution of graphene growth on Ni and Cu by carbon isotope labeling[J]. Nano Letters, 2009, 9(12): 4268-4272.
[18]	FAN D L, XU Y M, DONG X H. Heat treatment engineer manual[M].3th ed.Beijing: Mechanical Industry Press, 2011:102-136(in Chinese).
[19]	LI S L,YE Y K. Development of femtosecond laser direct writing waveguides in transparent optical materials[J].Laser Technology,2012,36(6):783-787(in Chinese).

Simulation of temperature field of graphene substrate fabricated by laser chemical vapor deposition

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views