Analysis of spectral characteristics of Zn0.95-xBe0.05MnxSe diluted magnetic semiconductor
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Department of Mechanical and Electrical Engineering, Hanzhong Vocational and Technical College, Hanzhong 723000, China;
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2.
School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723000, China
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Received Date:
2014-01-14
Accepted Date:
2014-02-25
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Abstract
In order to study the temperature-dependent optical properties of dilute magnetic semiconductor Zn0.95-xBe0.05MnxSe (x is 0.05,0.10,0.15,0.20 respectively), based on electric field modulation reflectance spectroscopy, surface photovoltage spectroscopy and fluorescence excitation spectra, theoretical analysis and experimental verification were made and a series of data were obtained. The results show that, the energy gap of the other samples, except the sample of x=0.1, would increase with the increase of Mn doped mole fraction, caused by the slight displacement of exchange interaction between the electrons of the valence band and the conductive band and the electrons of d generation of Mn. Because of the increase of lattice-phonon scattering effect, the transition signal will move to the direction of low energy when temperature elevates.
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