Study on scribing parameters of sapphire substrate with pulse green laser

XIE Xiaozhu; GAO Xunyin; CHEN Weifang; WEI Xin; HU Wei

doi:10.7510/jgjs.issn.1001-3806.2014.05.012

To improve the yield rate and scribing efficiency of sapphire substrate, the effect of polarization direction, laser power, focus position, cutting speed, scanning times on the scribing quality of sapphire substrate with pulse green laser (λ=532nm) was studied.The results show that narrow and deep grooves can be obtained when the polarization direction is parallel to the incidence plane and the laser focus position is negative defocus 50μm when scribing sapphire substrate with pulse green laser. The groove depth and width increase while the pulse laser power increases. The groove depth decreases and the groove width increases at first and then decreases with the increase of the scanning speed. The groove depth and width increase with the increase of the scanning times. The results are helpful for selection of reasonable laser scribing technical parameters to achieve optimal groove performance.

Study on scribing parameters of sapphire substrate with pulse green laser

1. School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China;

2. College of Mechanical Engineering, Nanjing University of Aeronauties and Astronauties, Nanjing 210016, China;

3. Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology, Nanjing 210016, China

Received Date: 2013-10-11

Accepted Date: 2013-10-31

Available Online: 2014-09-25

Abstract: To improve the yield rate and scribing efficiency of sapphire substrate, the effect of polarization direction, laser power, focus position, cutting speed, scanning times on the scribing quality of sapphire substrate with pulse green laser (λ=532nm) was studied.The results show that narrow and deep grooves can be obtained when the polarization direction is parallel to the incidence plane and the laser focus position is negative defocus 50μm when scribing sapphire substrate with pulse green laser. The groove depth and width increase while the pulse laser power increases. The groove depth decreases and the groove width increases at first and then decreases with the increase of the scanning speed. The groove depth and width increase with the increase of the scanning times. The results are helpful for selection of reasonable laser scribing technical parameters to achieve optimal groove performance.

HTML

Reference (14)

[1]	REA E C,Jr. Scribing of thin sapphire substrates with a 266nm Q-switched solid-state laser [J].Proceedings of the SPIE,2004,5339:231-240.
[2]	JUODKAZIS S, NISHIMURA K, MISAWA H. In-bulk and surface structuring of sapphire by femtosecond pulses [J]. Applied Surface Science, 2007, 253(15):6539-6544.
[3]	QI L, NISHII K, YASUI M, et al. Femtosecond laser ablation of sapphire on different crystallographic facet planes by single and multiple laser pulses irradiation [J]. Optics and Lasers in Engineering, 2010, 48(10):1000-1007.
[4]	ASHKENASI D, ROSENFELD A, VAREL H, et al. Laser processing of sapphire with picosecond and sub-picosecond pulses [J]. Applied Surface Science, 1997, 120(1/2):65-80.
[5]	HAN J, LI C, ZHANG M, et al. An investigation of long pulsed laser induced damage in sapphire [J]. Optics & Laser Technology, 2009, 41(3):339-344.
[6]	CHANG Q L, LIANG W W, HONG B Z, et al.Analysis of fracture surface for sapphire cut by long pulse laser [J]. Journal of Synthetic Crystals, 2010, 39(4):996-1001.
[7]	HE G T, WEI X, XIE X Zh, et al. Experimental measurement of absorptivity of sapphire at 532nm laser radiation [J]. Laser Technology, 2011, 35(1):54-57(in Chinese).
[8]	XIE X Zh, WEI X, HU W. Effect of linear polarized CO2 lasers on cut kerfs of nonmetallic material [J]. Laser Technology, 2008, 32(4):399-401 (in Chinese) .
[9]	READY J F. LIA handbook of laser materials processing [M]. New York,USA: Springer-Verlag,2001:425-470.
[10]	BOVATSEK J M, PATEL R S.Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique [J].Proceedings of the SPIE,2010, 7585:75850.
[11]	XIE X Zh, LI L J, WEI X, et al. Evaporative front of laser cutting PMMA [J]. Chinese Journal of Lasers, 2008, 35(6):924-930(in Chinese).
[12]	HUANG F M, XIE X Zh, WEI X H, et al.Newly developed techniques for laser dicing wafer[J]. Laser Technology, 2012, 36(3): 293-297(in Chinese ).
[13]	LI X Y, ZENG X Y, LIU Y, et al. Study of YAG laser cutting process with stainess steel sheet[J]. Chinese Journal of Lasers, 2011, A28(12):1125-1129 (in Chinese).
[14]	IWAI Y, MIZUNO T, ARAI T, et al. Scribing characteristics of ceramics with Nd：YLF laser [J].Proceedings of the SPIE,2003,5063:509-513.

Study on scribing parameters of sapphire substrate with pulse green laser

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views