Temperature distribution of semiconductors under rectangular laser pulse irradiation

ZUO Weihan; CHEN Zhaojiang; FANG Jianwen; LIU Shiqing

doi:10.7510/jgjs.issn.1001-3806.2014.04.008

In order to study three-dimensional photo-generated carrier density and temperature field distribution in semiconductor materials excited by the rectangular laser pulse, the analytical expressions of the temporal and space distributions of plasma wave and thermal wave were obtained by using the eigen function method. The time evolutions of the plasma and thermal wave for different characterized parameters of semiconductor samples and the radial diffusion characterizations of thermal wave in semiconductors were numerically simulated. The simulation results show that the characterized parameters of semiconductor samples such as surface recombination rates, lifetimes and diffusivity have important influences on temporal characteristics of plasma wave and thermal wave, especially at the stage of step changes. In addition, the sensitivity and correlation analysis of multi-parameters estimation shows that the characterization of single or two semiconductor parameters can be realized by fitting step response curve. The theoretical study provides the guidance for parameters measurement of semiconductor materials by the pulsed photothermal techniques using step optical excitation.

Temperature distribution of semiconductors under rectangular laser pulse irradiation

Corresponding author: FANG Jianwen, fjw@zjnu.cn;

1. College of Mathematics, Physics and Information Engineering, Zhejiang Normal University, Jinhua 321004, China

Received Date: 2013-08-26

Accepted Date: 2013-09-17

Available Online: 2014-07-25

Abstract: In order to study three-dimensional photo-generated carrier density and temperature field distribution in semiconductor materials excited by the rectangular laser pulse, the analytical expressions of the temporal and space distributions of plasma wave and thermal wave were obtained by using the eigen function method. The time evolutions of the plasma and thermal wave for different characterized parameters of semiconductor samples and the radial diffusion characterizations of thermal wave in semiconductors were numerically simulated. The simulation results show that the characterized parameters of semiconductor samples such as surface recombination rates, lifetimes and diffusivity have important influences on temporal characteristics of plasma wave and thermal wave, especially at the stage of step changes. In addition, the sensitivity and correlation analysis of multi-parameters estimation shows that the characterization of single or two semiconductor parameters can be realized by fitting step response curve. The theoretical study provides the guidance for parameters measurement of semiconductor materials by the pulsed photothermal techniques using step optical excitation.

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Reference (14)

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Temperature distribution of semiconductors under rectangular laser pulse irradiation

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