Study about continuous Ar+Kr+laser crystallization of amorphous silicon thin film

ZHOU De-rang; DUANG Guo-ping; CHEN Jun-ling; HAN Jun-he; HUANG Ming-ju

doi:10.7510/jgjs.issn.1001-3806.2013.05.006

Volume 37 Issue 5

Jul. 2013

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Study about continuous Ar+Kr+laser crystallization of amorphous silicon thin film

1.
Open Laboratory of Key Subject of Photoelectric Information Material of Henan Province, School of Physics and Electron, Henan University, Kaifeng 475004, China

Corresponding author: HUANG Ming-ju, hmingju@163.com
Received Date: 2013-01-07
Accepted Date: 2013-01-26

Abstract

In order to study the influence of laser power density on crystallization effect in continuous laser crystallization of amorphous silicon thin film, amorphous silicon thin films were prepared by means of magnetron sputtering and then crystallized by continuous Ar+Kr+laser. Crystallization effect was studied by means of micro-Raman spectroscopic measurement and field emission scanning electron microscope under the fixed time 5ms and different laser power density. The difference of crystal growth process on two different substrates-common glass substrate and quartz substrate was compared.It was shown that within the limit of 27.1kW/cm2 the amorphous Si films were able to be crystallized at laser power densities above 15.1kW/cm2 on common glass substrate, crystallization effect became better first and then worse with the increase of laser power density, large area of scattered apple shape polysilicon particles of crystal size around 478nm can be obtained at 24.9kW/cm2. An intermediate laser power density value exists to make the crystallization effect best. Films deposited on quartz substrate present a different crystallization growth process, large spherical polysilicon particles emerged as the energy density reaches to 19.7kW/cm2,with the increase of energy density, the particle size got larger and the maximum size 5.38m was obtained at 27.1kW/cm2. These results play a positive role in studying preparing poly-Si thin film by means of continuous laser crystallizing.
- thin films,
- polycrystalline silicon,
- continuous laser crystallization,
- laser power density,
- substrate

References

[1]	YUAN Z J, LOU Q H, ZHOU J, et al. Laser-induced crystallization of polycrystalline silicon thin films[J]. Laser Optoelectronics Progress,2007(11):52-57(in Chinese).
[2]	VOUTSAS A T. A new era of crystallization:advances in polysilicon crystallization and crystal engineering[J]. Applied Surface Science,2003,208/209:250-262.
[3]	YUAN Z J, LOU Q H, ZHOU J, et al. Flat-top green laser crystallization of amorphous silicon thin film[J]. Chinese Journal of Lasers,2009,36(1):205-209(in Chinese).
[4]	DAO V A, HAN K M, HEO J K, et al. Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization[J]. Thin Solid Films,2009,517(14):3971-3974.
[5]	TSAI Ch Ch, LEE Y J, WANG J L, et al. High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization[J]. Solid-State Electronics,2008,52(3):365-371.
[6]	CHEN Y S, YANG S E, LU J X, et al. Microstructure of microcrystalline silicon film by plasma enhanced CVD[J]. Journal of Synthetic Crystals,2005,34(4): 753-759(in Chinese).
[7]	REM J B, de LEUW M C V, HOLLEMAN J, et al. Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors[J]. Thin Solid Films,1997,296(1/2): 152-156.
[8]	SINGH R,FAKHRUDDIN M,POOLE K F. Rapid photothermal processing as a semiconductor manufacturing technology for the 21st century[J]. Applied Surface Science,2000,168(1/4):198-203.
[9]	TANG Zh X, SHEN H L, HUANG H B, et al. Preparation of high quality polycrystalline silicon thin films by aluminum-induced crystallization[J]. Thin Solid Films,2009,517(19): 5611-5615.
[10]	KUO C C. Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements[J]. Journal of Materials Processing Technology,2009,209(6):2978-2985.
[11]	MICHAUD J F, ROGEL R, MOHAMMED-BRAHIM T, et al. CW argon laser crystallization of silicon films: structural properties[J]. Journal of Non-Crystalline Solids,2006,352(9/20): 998-1002.
[12]	ROSSI M C, SALVATORI S, BURCHIELLI M, et al. Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides[J]. Thin Solid Films,2001,383(1/2):267-270.
[13]	PARK S J, KU Y M, KIM K H, et al. CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size[J]. Thin Solid Films,2006,511(7): 243 -247.
[14]	XU E M, YUAN C, WANG J P, et al. In-situ raman spectroscopic study on the crystallization of amorphous silicon thin films with a 532nm continuous-wave laser[J]. Journal of Light Scattering,2008,20(3):258-264(in Chinese).
[15]	CHEN J L,DUAN G P, HUANG M J. Influence of laser energy on average size of Si nanoparticles deposited in thin film[J].Laser Technology,2012,36(3):322-325(in Chinese).
[16]	DUAN G P, CHEN J L, HAN J H, et al. Raman spectroscopic study of the crystallization of intrinsic amorphous silicon thin films with a 488nm continuous-wave laser[J].Acta Photonica Sinica,2011,40(11):1657-1661(in Chinese).
[17]	TOET D, SMITH P M, SIGMON T W, et al. Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films[J]. Journal of Applied Physics,1999, 85(11):7914-7917.
[18]	MAVI H S, JAIN K P, SHUKLA A K, et al. Raman study of cw laser-induced crystallization of a-Si:H films on quartz and sapphire substrates[J]. Journal of Applied Physics,1991,69(6): 3696-3701.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Study about continuous Ar+Kr+laser crystallization of amorphous silicon thin film

Corresponding author: HUANG Ming-ju, hmingju@163.com

1. Open Laboratory of Key Subject of Photoelectric Information Material of Henan Province, School of Physics and Electron, Henan University, Kaifeng 475004, China

Received Date: 2013-01-07

Accepted Date: 2013-01-26

Available Online: 2013-09-25

Abstract: In order to study the influence of laser power density on crystallization effect in continuous laser crystallization of amorphous silicon thin film, amorphous silicon thin films were prepared by means of magnetron sputtering and then crystallized by continuous Ar+Kr+laser. Crystallization effect was studied by means of micro-Raman spectroscopic measurement and field emission scanning electron microscope under the fixed time 5ms and different laser power density. The difference of crystal growth process on two different substrates-common glass substrate and quartz substrate was compared.It was shown that within the limit of 27.1kW/cm2 the amorphous Si films were able to be crystallized at laser power densities above 15.1kW/cm2 on common glass substrate, crystallization effect became better first and then worse with the increase of laser power density, large area of scattered apple shape polysilicon particles of crystal size around 478nm can be obtained at 24.9kW/cm2. An intermediate laser power density value exists to make the crystallization effect best. Films deposited on quartz substrate present a different crystallization growth process, large spherical polysilicon particles emerged as the energy density reaches to 19.7kW/cm2,with the increase of energy density, the particle size got larger and the maximum size 5.38m was obtained at 27.1kW/cm2. These results play a positive role in studying preparing poly-Si thin film by means of continuous laser crystallizing.

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Reference (18)

[1]	YUAN Z J, LOU Q H, ZHOU J, et al. Laser-induced crystallization of polycrystalline silicon thin films[J]. Laser Optoelectronics Progress,2007(11):52-57(in Chinese).
[2]	VOUTSAS A T. A new era of crystallization:advances in polysilicon crystallization and crystal engineering[J]. Applied Surface Science,2003,208/209:250-262.
[3]	YUAN Z J, LOU Q H, ZHOU J, et al. Flat-top green laser crystallization of amorphous silicon thin film[J]. Chinese Journal of Lasers,2009,36(1):205-209(in Chinese).
[4]	DAO V A, HAN K M, HEO J K, et al. Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization[J]. Thin Solid Films,2009,517(14):3971-3974.
[5]	TSAI Ch Ch, LEE Y J, WANG J L, et al. High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization[J]. Solid-State Electronics,2008,52(3):365-371.
[6]	CHEN Y S, YANG S E, LU J X, et al. Microstructure of microcrystalline silicon film by plasma enhanced CVD[J]. Journal of Synthetic Crystals,2005,34(4): 753-759(in Chinese).
[7]	REM J B, de LEUW M C V, HOLLEMAN J, et al. Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors[J]. Thin Solid Films,1997,296(1/2): 152-156.
[8]	SINGH R,FAKHRUDDIN M,POOLE K F. Rapid photothermal processing as a semiconductor manufacturing technology for the 21st century[J]. Applied Surface Science,2000,168(1/4):198-203.
[9]	TANG Zh X, SHEN H L, HUANG H B, et al. Preparation of high quality polycrystalline silicon thin films by aluminum-induced crystallization[J]. Thin Solid Films,2009,517(19): 5611-5615.
[10]	KUO C C. Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements[J]. Journal of Materials Processing Technology,2009,209(6):2978-2985.
[11]	MICHAUD J F, ROGEL R, MOHAMMED-BRAHIM T, et al. CW argon laser crystallization of silicon films: structural properties[J]. Journal of Non-Crystalline Solids,2006,352(9/20): 998-1002.
[12]	ROSSI M C, SALVATORI S, BURCHIELLI M, et al. Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides[J]. Thin Solid Films,2001,383(1/2):267-270.
[13]	PARK S J, KU Y M, KIM K H, et al. CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size[J]. Thin Solid Films,2006,511(7): 243 -247.
[14]	XU E M, YUAN C, WANG J P, et al. In-situ raman spectroscopic study on the crystallization of amorphous silicon thin films with a 532nm continuous-wave laser[J]. Journal of Light Scattering,2008,20(3):258-264(in Chinese).
[15]	CHEN J L,DUAN G P, HUANG M J. Influence of laser energy on average size of Si nanoparticles deposited in thin film[J].Laser Technology,2012,36(3):322-325(in Chinese).
[16]	DUAN G P, CHEN J L, HAN J H, et al. Raman spectroscopic study of the crystallization of intrinsic amorphous silicon thin films with a 488nm continuous-wave laser[J].Acta Photonica Sinica,2011,40(11):1657-1661(in Chinese).
[17]	TOET D, SMITH P M, SIGMON T W, et al. Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films[J]. Journal of Applied Physics,1999, 85(11):7914-7917.
[18]	MAVI H S, JAIN K P, SHUKLA A K, et al. Raman study of cw laser-induced crystallization of a-Si:H films on quartz and sapphire substrates[J]. Journal of Applied Physics,1991,69(6): 3696-3701.

Study about continuous Ar+Kr+laser crystallization of amorphous silicon thin film

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views