Study on characteristics of 1-D ternary photonic crystal containing gain medium defect layer

GAO Wen-jing; LIANG Liang

doi:10.7510/jgjs.issn.1001-3806.2013.02.003

In order to design a crystal with special optical characteristics, the characteristics of 1-D ternary photonic crystal containing gain medium defects layer was studied with transfer matrix method without considering dispersion relation, and its band structure and optical amplification characteristics were analyzed and discussed. There is strong optical amplification in the passband edge 0.242μm. The thickness and optical constants of the gain medium at 0.242μm was studied, and the characteristics of the optical amplification were discussed when changing the central wavelength of light. The results indicate that there is corresponding forbidden band on the both sides of center wavelength when the center wavelength is 0.3μm. The influence of the band gap structures is small when changing the thickness and optical constants of the defect layer, and there is strong optical amplificatiom in passband edge 0.242μm. This simulated data provides a theoretical guidance for photonic crystal of the desired characteristics.

Study on characteristics of 1-D ternary photonic crystal containing gain medium defect layer

Corresponding author: LIANG Liang, 271463270@qq.com

1. Department of Physics, Xi'an University of Architecture & Technology, Xi'an 710055, China

Received Date: 2012-06-28

Accepted Date: 2012-08-30

Available Online: 2013-03-25

Abstract: In order to design a crystal with special optical characteristics, the characteristics of 1-D ternary photonic crystal containing gain medium defects layer was studied with transfer matrix method without considering dispersion relation, and its band structure and optical amplification characteristics were analyzed and discussed. There is strong optical amplification in the passband edge 0.242μm. The thickness and optical constants of the gain medium at 0.242μm was studied, and the characteristics of the optical amplification were discussed when changing the central wavelength of light. The results indicate that there is corresponding forbidden band on the both sides of center wavelength when the center wavelength is 0.3μm. The influence of the band gap structures is small when changing the thickness and optical constants of the defect layer, and there is strong optical amplificatiom in passband edge 0.242μm. This simulated data provides a theoretical guidance for photonic crystal of the desired characteristics.

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Reference (17)

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Study on characteristics of 1-D ternary photonic crystal containing gain medium defect layer

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