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Volume 36 Issue 4
Apr.  2013
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Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition

  • Received Date: 2011-10-24
    Accepted Date: 2011-12-16
  • Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.
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通讯作者: 陈斌, bchen63@163.com
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition

  • 1. School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China;
  • 2. Guangzhou Research Institute of Optics-Mechanics-Electricity Technology, Guangzhou 510663, China

Abstract: Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.

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