Residual stress of Zr thin film deposited by magnetic sputtering
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1.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
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2.
Shanghai Center for Photovoltaics, Shanghai 201201, China
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Received Date:
2012-01-09
Accepted Date:
2012-01-16
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Abstract
In order to study stress distribution in Zr films prepared by magnetron sputtering,after measuring the profile of the substrate before and after the coating,the stress distribution in the Zr film was calculated and the relationship between the work pressure,Zr film thickness and residual stress was studied.The results show that it is mainly uneven compressive stress in the Zr thin films.Work pressure has little effect on the residual stress of Zr thin films.Thickness of Zr thin films has greater influence on the residual stress,with increase of thickness,film stress decreases.
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