Ultrafine shift of laser beam based on the Goos-Hänchen effect
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1.
State Key Laboratory of Advanced Design and Manufacturing for Body, Hunan University, Changsha 410082, China;
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2.
Laser Research Institute, Hunan University, Changsha 410083, China
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Received Date:
2012-02-17
Accepted Date:
2012-02-28
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Abstract
Using the optical nonlinear crystal materials as the guiding layer,symmetrical metal-cladding waveguide configuration was employed in the measurement of lateral shift of the laser beam.Due to the enhancement effect of Goos-Hänchen at the resonant condition,lateral shift of the laser beam can be controlled precisely by applying DC voltage on the guiding-layer.720μm maximum variation of the lateral shift was observed in the experiment and the measurement precision was 25nm.The experimental results are in agreement with the simulation.It is expected that this work will provide tools and resources of potential application in micro-fabrication.
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Proportional views
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