Investigation on laser polishing of GaN film using deep ultraviolet laser
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Key Laboratory of Fiber Optic Sensing Technology, Wuhan University of Technology, Wuhan 430070, China
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Corresponding author:
DAI Yu-tang, daiyt68@163.com
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Received Date:
2011-06-24
Accepted Date:
2011-07-04
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Abstract
To study laser polishing performance of the 157nm deep ultraviolet(UV) laser,micro-surface laser etching of GaN semiconductor film was performed using a small laser-spot.After investigating the influencing relationships between the process parameters and the polishing quality,ideal process parameters were obtained.The results show that the etched surface roughness Ra gradually decreases with the speed of laser scan.When the scan speed is 0.014mm/s~0.015mm/s,the polishing quality of the etched surface is the best.With the decreasing of scan shift rate perpendicular to scan direction or with the increasing of laser repetition rate,the etched surface roughness would increase.As the laser repetition rate is 8Hz,the polishing effect is preferable and the surface roughness Ra is about 20nm.
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References
|
[1]
|
DAI Y T,XU G,CUI J L,et al.Micro etching of GaN-based semiconductor materials using 157nm laser[J].Chinese Journal of Lasers,2009,36(12):3138-3142(in Chinese). |
|
[2]
|
DAI Y T,CUI J L,XU G,et al.Influence of laser parameters on etching performance during 157nm laser micromachining[J].Laser Technology,2011,35 (1):36-85(in Chinese). |
|
[3]
|
CHEN L,YANG Y Q.Mechanism and application of laser polishing[J].Surface Technology,2003,32(5):49-52(in Chinese). |
|
[4]
|
OBATA K,SUGIOKA K,AKANE T,et al.Influence of laser fluence and irrdiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation process[J].Applied Physics,2001,A73 (6):755-759. |
|
[5]
|
MUTAPCIC E,IOVENITTI P,HAYES J P.A 3D-CAM system for quick prototyping and microfabrication using excimer laser micromachining[J].Microsystem Technologies,2005,12(1/2):128-136. |
|
[6]
|
FUJIKAWA T,SHIBASKI Y,ANDO S,et al.New photoresist materials for 157nm lithography[J].Chemical of Materials,2003,15(7):1512-1517. |
|
[7]
|
LI W L,LI Y,LI W.Mechanism study of silica ablating on photonic crystal fiber by 157nm laser[J].Laser Technology,2006,30(6):601-604 (in Chinese). |
|
[8]
|
DUG J,CHEN T,ZUO T Ch,et al.Lens array homogenizer for excimer lasers[J].Journal of Optoelectronics · Laser,2005,16(3):279-281 (in Chinese). |
|
[9]
|
ZHAO Z Y,HOU D S,DONG X Ch,et al.Research on etching properties of polycarbonate by KrF excimer laser[J].Opto-Electronic Engineering,2004,31 (2):4-7(in Chinese). |
|
[10]
|
FU G S,CHU L Z,ZHOU Y,et al.Influence of pulse repetition rate on morphology of nanocrystalline silicon film prepared by pulsed laser deposition[J].Chinese Journal of Laser,2005,32(9):1254-1257(in Chinese). |
|
[11]
|
DEGN H Y,RAO Y J,RAN Z L,et al.Photonic crystal fiber based Fabry-Pérot sensor fabricated by using 157nm laser micromachining[J].Acta Optica Sinica,2008,28(2):254-258(in Chinese). |
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