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Volume 35 Issue 4
May  2013
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Effect of deposition condition on morphology and deposition velocity of LiH films

  • Corresponding author: LEI Jie-hong, jiehonglei@126.com
  • Received Date: 2010-09-13
    Accepted Date: 2010-11-22
  • In order to study effect of deposition conditions on morphology and deposition velocity of LiH films,LiH films were prepared on Si(100) substrate by means of pulsed laser deposition.The deposition velocity of LiH films were controlled by changing the substrate-target distance and hydrogen pressure.The relations among hydrogen pressure,deposition velocity and surface quality of the films were obtained.The results showed that the deposition velocity of LiH films decreased with hydrogen pressure and substrate-target distance increasing,moreover,the surface roughness can be reduced by increasing the hydrogen pressure to a certain degree.The relation between surface roughness and hydrogen pressure was discussed based on the growth mechanism of films.The theoretical values are in good agreement with experimental values.
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Effect of deposition condition on morphology and deposition velocity of LiH films

    Corresponding author: LEI Jie-hong, jiehonglei@126.com
  • 1. Physics and Electronic Information Insitute, West China Normal University, Nanchong 637002, China;
  • 2. Key Laboratory for Radioactive Waste and Environmental Security, Southwest University of Science and Technology, Mianyang 621010, China;
  • 3. Research Center of Laser Fusion, Chinese Academy of Engineering Physics, Mianyang 621900, China

Abstract: In order to study effect of deposition conditions on morphology and deposition velocity of LiH films,LiH films were prepared on Si(100) substrate by means of pulsed laser deposition.The deposition velocity of LiH films were controlled by changing the substrate-target distance and hydrogen pressure.The relations among hydrogen pressure,deposition velocity and surface quality of the films were obtained.The results showed that the deposition velocity of LiH films decreased with hydrogen pressure and substrate-target distance increasing,moreover,the surface roughness can be reduced by increasing the hydrogen pressure to a certain degree.The relation between surface roughness and hydrogen pressure was discussed based on the growth mechanism of films.The theoretical values are in good agreement with experimental values.

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