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Volume 35 Issue 1
Jan.  2016
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Effect of oxygen pressure on structure of Zn1-xAlxO thin film and laser-induced voltages

  • Corresponding author: ZHANG Peng-xiang, pxzhang@hotmail.com
  • Received Date: 2010-03-08
    Accepted Date: 2010-04-06
  • In order to study the influence of annealing oxygen pressure on crystalline and laser-induced voltages (LIV) of Al-doped ZnO thin film, it was prepared on sapphire(0001) single crystal substrates by means of pulsed laser deposition technology. Then the micro-structure of the thin film was determined by means of X-ray diffraction (XRD). The corresponding LIV signals were detected with these thin film illuminated by ultraviolet pulsed laser. The results were theoretically analyzed and experimentally validated. The results indicated that c-axis oriented thin film was produced and the optimal generation conditions were determined. Meanwhile, the results showed that the both ends of the film would induce LIV and its maximal value was 0.532V when the film was irradiated by laser with wavelength of 248nm, pulse bandwidth of 20ns. With the annealing oxygen pressure increasing, the peak LIV increases at first and then decreases. It is helpful to in the application of the film in ultraviolet detectors
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Effect of oxygen pressure on structure of Zn1-xAlxO thin film and laser-induced voltages

    Corresponding author: ZHANG Peng-xiang, pxzhang@hotmail.com
  • 1. Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051, China

Abstract: In order to study the influence of annealing oxygen pressure on crystalline and laser-induced voltages (LIV) of Al-doped ZnO thin film, it was prepared on sapphire(0001) single crystal substrates by means of pulsed laser deposition technology. Then the micro-structure of the thin film was determined by means of X-ray diffraction (XRD). The corresponding LIV signals were detected with these thin film illuminated by ultraviolet pulsed laser. The results were theoretically analyzed and experimentally validated. The results indicated that c-axis oriented thin film was produced and the optimal generation conditions were determined. Meanwhile, the results showed that the both ends of the film would induce LIV and its maximal value was 0.532V when the film was irradiated by laser with wavelength of 248nm, pulse bandwidth of 20ns. With the annealing oxygen pressure increasing, the peak LIV increases at first and then decreases. It is helpful to in the application of the film in ultraviolet detectors

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