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Volume 34 Issue 2
May  2010
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Study on 1-D photonic crystal containing negative refraction material with impurity defects

  • Received Date: 2008-12-27
    Accepted Date: 2009-03-10
  • With the help of the transmission matrix, the optical transmission property of 1-D photonic crystal containing negative refraction material with impurity defects was studied. There are two methods,insertion and substitution, to introduce defects into the arranged photonic crystal, and defect modes should happen.The defect modes resulted from negative defect often appears in the omni-directional photonic band gap, while those resulted from positive defect usually appears in the Bragg gap.The effect of doped method,incident direction, the thickness, defect location and defect type on the defect modes was studied.After analyzing two-defect-layer photonic crystal, the relation between the distance of both the layers and the band gap was found, i.e.,the nearer the defect layers, the easier and deeper the defect modes generated.The conclusions are useful for making the new type omni-directional filters.
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Study on 1-D photonic crystal containing negative refraction material with impurity defects

  • 1. School of Optoelectronic Information, University of Electronic Science Technology of China, Chengdu 610054, China

Abstract: With the help of the transmission matrix, the optical transmission property of 1-D photonic crystal containing negative refraction material with impurity defects was studied. There are two methods,insertion and substitution, to introduce defects into the arranged photonic crystal, and defect modes should happen.The defect modes resulted from negative defect often appears in the omni-directional photonic band gap, while those resulted from positive defect usually appears in the Bragg gap.The effect of doped method,incident direction, the thickness, defect location and defect type on the defect modes was studied.After analyzing two-defect-layer photonic crystal, the relation between the distance of both the layers and the band gap was found, i.e.,the nearer the defect layers, the easier and deeper the defect modes generated.The conclusions are useful for making the new type omni-directional filters.

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