Thermal effect of high power Yb：YAG microchip solid-state laser

LI Long; DONG Wu-wei; SHI Peng; GAN An-sheng; XU Qi-ming

doi:10.3969/j.issn.1001-3806.2010.01.003

In order to study the nonuniform temperature rise and thermal effect in the Yb:YAG crystal, based on the theory of semi-analytical thermal analysis and working characteristic analysis of Yb:YAG microchip with super-Gaussian beam end-pumping and back-face cooling, a new solution of heat conduction equation was introduced and the general expressions of temperature field, thermal distortion field and additional optical path differences (OPD) of Yb:YAG microchip were obtained respectively. Some factors affecting the temperature distribution and thermal distortion of Yb:YAG microchip, such as the super-Gaussian beam with different orders,different spot radius, were quantitatively analyzed. If a Yb:YAG microchip with 0.08 atom fraction of ytterbium is end-pumped by the fifth order super-Gaussian beam with power of 50W in 300μm radius, its maximal temperature raise was up to 52.18℃ and its maximum thermal distortion was 0.1195μm and maximum additional OPD was 0.2152μm. The results can provide theoretical instruction for the heat insensitivity cavity design of microchip laser.

Thermal effect of high power Yb：YAG microchip solid-state laser

1. Faculty of Science, Xi'an University of Architecture & Technology, Xi'an 710055, China;

2. School of Materials Science and Engineering, Xi'an University of Architecture & Technology, Xi'an 710055, China

Received Date: 2009-01-06

Accepted Date: 2009-03-03

Available Online: 2010-01-25

Abstract: In order to study the nonuniform temperature rise and thermal effect in the Yb:YAG crystal, based on the theory of semi-analytical thermal analysis and working characteristic analysis of Yb:YAG microchip with super-Gaussian beam end-pumping and back-face cooling, a new solution of heat conduction equation was introduced and the general expressions of temperature field, thermal distortion field and additional optical path differences (OPD) of Yb:YAG microchip were obtained respectively. Some factors affecting the temperature distribution and thermal distortion of Yb:YAG microchip, such as the super-Gaussian beam with different orders,different spot radius, were quantitatively analyzed. If a Yb:YAG microchip with 0.08 atom fraction of ytterbium is end-pumped by the fifth order super-Gaussian beam with power of 50W in 300μm radius, its maximal temperature raise was up to 52.18℃ and its maximum thermal distortion was 0.1195μm and maximum additional OPD was 0.2152μm. The results can provide theoretical instruction for the heat insensitivity cavity design of microchip laser.

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Reference (20)

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Thermal effect of high power Yb：YAG microchip solid-state laser

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通讯作者: 陈斌, bchen63@163.com

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