基质刻蚀的高功率外腔面发射激光器

伍瑜; 倪演海; 戴特力; 周勇; 秦莉; 梁一平; 范嗣强; 张鹏

doi:10.3969/j.issn.1001-3806.2012.02.014

基质刻蚀的高功率外腔面发射激光器

1.
重庆师范大学物理与电子工程学院重庆 400047;
2.
重庆师范大学重庆市高校光学工程重点实验室重庆 400047;
3.
中国电子科技集团公司第四十四研究所重庆 400060;
4.
中国科学院长春精密机械与物理研究所长春 130022

作者简介: 伍瑜(1986- ),女,硕士研究生,主要从事激光单元器件及技术方面的研究..

通讯作者: 张鹏, gchzh2003@yahoo.com.cn

基金项目:
重庆市高校创新团队建设计划资助项目(201013);重庆市高校光学工程重点实验室资助项目(0705);重庆师范大学博士启动基金资助项目(11XLB014)
中图分类号: TN248.4

Substrate-etched high power external-cavity surface-emitting lasers

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;
2.
Chongqing High Education Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 400047, China;
3.
The 44th Research Institute, China Electronics Technology Croup Corporation, Chongqing 400060, China;
4.
Changchun Institute of Opties, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China

Corresponding author: ZHANG Peng, gchzh2003@yahoo.com.cn

CLC number: TN248.4

摘要: 为了降低光抽运外腔面发射激光器的热效应,提高激光器的输出功率,采用液体毛细键合方法将逆序生长的半导体外延片与高热导率的碳化硅散热窗口键合,并用化学刻蚀方法去除外延片的基质。实验研究了用基质刻蚀的外延片搭建的外腔面发射激光器的性能。当增益介质的有源区为InGaAs/AlGaAs多量子阱、抽运源为808nm的光纤耦合输出半导体激光器,输出镜对激光波长透过率为3%时,在室温下获得TEM00模的最大输出功率0.52W,激光波长1018nm,光谱线宽2nm(半峰全宽),激光器的光光转换效率约为20%。测得x方向与y方向的M2因子分别为1.01和1.00,说明输出光束为质量优良的近衍射极限高斯光束。结果表明,基质刻蚀技术可明显改善外腔面发射激光器的热性能,获得高功率、高光束质量的激光输出。
- 激光器 /
- 外腔面发射激光器 /
- 多量子阱 /
- 基质刻蚀 /
- 光抽运
Abstract: To decrease the thermal effect of a vertical-external-cavity surface-emitting laser and increase its output power,a high thermal conductivity SiC heatspreader was bond on the reverse-order semiconductor wafer with the capillary method,and then the substrate was removed by means of chemical etch.The characteristics of the laser formed by the substrate-etched wafer were experimentally studied.When the active region in the gain structure is InGaAs/AlGaAs multiple quantum wells,the pump source is a fiber-coupled 808nm diode laser,and the transmission of the output coupler is 3% at laser wavelength,the TEM00 mode output power of 0.52W and the optical-to-optical conversion efficiency of 20% are obtained at room temperature.The laser wavelength is 1018nm,and the spectrum width is 2nm(full width half maximum).The measured M2 factor in x and y direction of 1.01 and 1.00 demonstrate the near diffraction-limited Gaussian beam of the laser.It can be concluded that the substrate-etching technology can significantly improve the thermal property of vertical-external-cavity surface-emitting lasers and results in high power and high beam quality.
- lasers /
- external-cavity surface-emitting laser /
- multiple quantum well /
- substrate-etched /
- optically-pumped

[1]	KUZNETSOV M,HAKIMI F,SPRAGUE R,et al.High power(＞0.5W-CW)diode pumped vertical-external-cavity surface emitting semiconductor lasers with circular TEM0obeams[J].IEEE Photonics Technology Letters,1997,9(8):1063-1065.
[2]	KUZNETSOV M,HAKIMI F,SPRAGUE R,et al.Design and characteristics of high power(＞0.5W-CW)diode-pumped vertical-external-cavity surface emitting semiconductor lasers with circular TEM00beams[J].IEEE Journal of Selected Topics in Quantum Electronics,1999,5(3):561-573.
[3]	SONG Y R,ZHANG P,ZHANG X P,et al.Intracavity frequencydoubled green vertical external cavity surface emitting laser[J].Chinese Optics Letters,2008,6(4):271-273.
[4]	SONG Y R,ZHANG P,ZHANG X P,et al.Intracavity frequencydoubled green optically pumped semiconductor vertical external cavity surface emitting laser[J].Chinese Journal of Lasers,2007,34(12):1763(in Chinese).
[5]	CALVEZ S,HASTIE J E,GUINA M,et al.Semiconductor disk lasers for the generation of visible and ultraviolet radiation[J].Laser Photonics Reviews,2009,3(5):407-434.
[6]	KELLER U,TROPPER A C.Passively mode-locked surface-emitting semiconductor lasers[J].Physics Reports,2006,429(2):67-120.
[7]	HARING R,PASCHOTTA R,ASCHWANDEN A,et al.High-power passively mode-locked semiconductor lasers[J].IEEE Journal of Quantum Electronics,2002,38(9):1268-1275.
[8]	ZHANG P,YU W M,SONG Y R,et al.Technology of SESAM mode-locked OP-VECSELs[J].Laser Technology,2007,31(3):291-294(in Chinese).
[9]	LI F.Tunable high-power high-brightness vertical-external-cavity surface-emitting laser and applications[D].Tucson,USA:The University of Arizona,2006:1-96.
[10]	LEE J H,KIM J Y,LEE S M,et al.9.1W high-efficient continuous-wave end-pumped vertical-external-cavity surface-emitting semiconductor laser[J].IEEE Photonics Technology Letters,2006,18(20):2117-2119.
[11]	SONG Y R,ZHANG P,ZHANG X P,et al.Theoretical analyses and experimental studies on semiconductor disk lasers[J].Optical Quantum Electronics,2009,41(1):39-45.
[12]	CHEN B Z,DAI T L,LIANG Y P,et al.Finite element analysis of thermal management in optical pumping semiconductor vertical-external cavity surface-emitting laser[J].Chinese Journal of Lasers,2009,36(10):2745-2750(in Chinese).
[13]	LU G G,HE C F,QIN L,et al.980nm optically pumped semiconductor disk laser[J].Chinese Optics Letters,2007,5(s1):151-153.
[14]	ZONG N,CUI D F,LI C M,et al.Numerical simulation of intracavity second harmonic generation for optically pumped semiconductor vertical-external-cavity surface-emitting lasers[J].Acta Physica Sinica,2009,58(6):3903-3908(in Chinese).
[15]	ZHANG P,SONG Y R,TIAN J R,et al.Gain characteristics of the InGaAs strained quantum wells with GaAs,AlGaAs,and GaAsP barriers in vertical-external-cavity surface-emitting lasers[J].Journal of Applied Physics,2009,105(5):053103/1-053103/8.
[16]	ZHANG P,SONG Y R,DAI T L,et al.Structural optimization of quantum wells used in a 1 μm vertical-external-cavity surface-emitting laser[J].Journal of Nanophotonics,2011,5(1):059502/1-059502/6.

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基质刻蚀的高功率外腔面发射激光器

作者简介: 伍瑜(1986- ),女,硕士研究生,主要从事激光单元器件及技术方面的研究..

通讯作者: 张鹏, gchzh2003@yahoo.com.cn

Substrate-etched high power external-cavity surface-emitting lasers

Corresponding author: ZHANG Peng, gchzh2003@yahoo.com.cn

计量

基质刻蚀的高功率外腔面发射激光器

通讯作者: 张鹏, gchzh2003@yahoo.com.cn

作者简介: 伍瑜(1986- ),女,硕士研究生,主要从事激光单元器件及技术方面的研究.

English Abstract

Substrate-etched high power external-cavity surface-emitting lasers

Corresponding author: ZHANG Peng, gchzh2003@yahoo.com.cn

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留言板

基质刻蚀的高功率外腔面发射激光器

作者简介: 伍瑜(1986- ),女,硕士研究生,主要从事激光单元器件及技术方面的研究..

通讯作者: 张鹏, gchzh2003@yahoo.com.cn

Substrate-etched high power external-cavity surface-emitting lasers

Corresponding author: ZHANG Peng, gchzh2003@yahoo.com.cn

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出版历程

基质刻蚀的高功率外腔面发射激光器

通讯作者: 张鹏, gchzh2003@yahoo.com.cn

作者简介: 伍瑜(1986- ),女,硕士研究生,主要从事激光单元器件及技术方面的研究.

English Abstract

Substrate-etched high power external-cavity surface-emitting lasers

Corresponding author: ZHANG Peng, gchzh2003@yahoo.com.cn

全文HTML

目录