[1] NASRALLAH T B,AMLOUK M,BERNEDE J C,et al.Structure and morphology of sprayed ZnS thin films[J].Physics Status Solidi,2004,201(14):3070-3076.
[2] VELUMANI S,ASCENCIO J A.Formation of ZnS nanorods by simple evaporation technique[J].Appl Phys,2004,A79(1):153-156.
[3] MCLAUGHLIN M,SAKEEK H F,MAGUIRE P,et al.Properties of ZnS thin films prepared by 248nm pulsed laser deposition[J].A P L,1993,63(14):1865-1867.
[4] JIU Zh X,ZHANG B L,YAO N.ZnS thin film deposited by pulsed lasers and its luminescent characteristic[J].Laser Technology,2004,28(6):620-624(in Chinese).
[5] MOROZOVA N K,KARETNIKOV I A,PLOTNICHENKO V G,et al.Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure[J].Semiconductors,2004,38(1):36-41.
[6] CHEN S Y,ZENG M G,WANG Sh J,et al.Fabrication of the ZnS thin film electroluminescence devices on silicon substrate[J].Journal of Xiamen University(Natural Scicence),2003,42(6):723-726(in Chinese).
[7] BANDIC Z Z,PIQUETTE E C,MCCALDIN J O,et al.Solid phase recrystallization of ZnS thin films on sapphire[J].A P L,1998,72(22):2862-2864.
[8] MCCAMY J W,LOWNDES D H,BUDAI J D,et al.Epitaxial ZnS films grown on GaAs(001) and(111) by pulsed-laser ablation[J].J A P,1993,73(11):7818-7822.
[9] GOKARNA A,PAVASKAR N R,SATHAYE S D,et al.Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon[J].J A P,2002,92(4):2118-2124.
[10] XING D S,SHI J X,GONG M L,et al.Luminescence modulation of porous silicon-zinc sulfide nanocomposite by in situ synthesis of zinc sulfide[J].Chemical Journal of Chinese Universities,2004,25(1):24-26(in Chinese).
[11] CANHAM L T.Silicon quantum wire array fabrication by electro-chemical and chemical dissolution of wafers[J].A P L,1990,57(10):1046-1048.
[12] LIAO L Sh,BAO X M,MIN N B.Two kinds of photoluminescence spectra in porous silicon[J].Journal of Semiconductor,1995,16(2):145-148(in Chinese).
[13] LIU Y L,LIU Y C,YANG H,et al.The optical properties of ZnO films grown on porous Si templates[J].J Phys,2003,D36(21):2705-2708.
[14] ZHANG P,KIM P S,SHAM T K.Nanostructured CdS prepared on porous silicon substrate:structure,electronic,and optical properties[J].J A P,2002,91(9):6038-6043.
[15] XU D Sh,GUO G L,GUI L L.Controlling growth and field emission property of aligned carbon nanotubes on porous silicon[J].A P L,1999,75(4):481-484.
[16] FAN Sh Sh,CHAPLINE M G.Self-oriented regular arrays of carbon nanotubes and their field emission properties[J].Science,1999,283(5401):512-515.
[17] GOKARNA A,BHORASKAR S V,PAVASKAR N R,et al.Optoelectronic characterization of porous silicon/CdS and ZnS systems[J].Physics Status Solidi,2000,A182(1):175-179.
[18] CHEN Q W,ZHU D L,ZHU C.A way to obtain visible blue light emission in porous silicon[J].A P L,2003,82(7):1018-1020.
[19] PROKES S M,FREITAS J A,Jr,SEARSON P C.Microluminescence depth profiles and annealing effects in porous silicon[J].A P L,1992,60(26):3295-3297.