[1] CHEN D, WANG R, PU T, et al. A novel thresholder based on XGM effect in a DFB laser combined with external optical filtering[J]. IEEE Photonics Journal, 2016, 8(1): 1-7.
[2] SHI Sh Sh, WANG H L, GONG Q, et al. Refined sectionalized method of QD-SOA[J]. Optik-International Journal for Light and Electron Optics, 2014, 125(1): 504-507.
[3] SINGH P, TRIPATHI D K, JAISWAL S, et al. Designs of all-optical buffer and OR gate using SOA-MZI[J]. Optical and Quantum Electronics, 2014, 46(11): 1435-1444. doi: 10.1007/s11082-013-9856-0
[4] ZAJNULINA M, LINGNAU B, LVDGE K. Four-wave mixing in quantum-dot semiconductor optical amplifiers: A detailed analysis of the nonlinear effects[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2017, 23(6): 1-12.
[5] KOTB A. Simulation of high quality factor all-optical logic gates based on quantum-dot semiconductor optical amplifier at 1Tb/s[J]. Optik-International Journal for Light and Electron Optics, 2016, 127(1): 320-325. doi: 10.1016/j.ijleo.2015.10.093
[6] CUI L L, WANG H L, LI W, et al. Study on gain recovery time of wavelength conversion based on single-port-coupled QD-SOA[J]. Laser Technology, 2016, 40(5): 742-745(in Chinese).
[7] AMOR L. All-optical networks: Security issues analysis[J]. Journal of Optical Communications and Networking, 2015, 7(3): 136-145. doi: 10.1364/JOCN.7.000136
[8] TAN H N, INOUE T, SOLIS-TRAPALA K, et al. On the cascadability of all-optical wavelength converter for high-order QAM formats[J]. Journal of Lightwave Technology, 2016, 34(13): 3194-3205. doi: 10.1109/JLT.2016.2545246
[9] MATAUURA M, OHTA H, SEKI R. Experimental investigation of chirp properties induced by signal amplification in quantum-dot semiconductor optical amplifiers[J]. Optics Letters, 2015, 40(6): 914-917. doi: 10.1364/OL.40.000914
[10] ALIMOHAMMADI F, YADIPOUR R, ABBASIAN K, et al. THz-assisted instantaneous gain switching in quantum dot semiconductor optical amplifiers[J]. IEEE Photonics Technology Letters, 2015, 27(3): 288-291. doi: 10.1109/LPT.2014.2369514
[11] EYAL O, WILLINGER A, BANYOUDEH S, et al. Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures[J]. Optics Express, 2017, 25(22): 27262-27269. doi: 10.1364/OE.25.027262
[12] YANG W H, WANG H L, WANG Zh X, et al.Wavelength conversion efficiency of quantum dot semiconductor optical amplifier[J].Acta Optica Sinica, 2017, 37(4):0406005(in Chinese). doi: 10.3788/AOS
[13] CHEN T T, WANG H L, LIU S, et al. Theoretical study on chirp of wavelength conversion based on QD-SOA[J]. Laser Technology, 2016, 40(2): 292-295(in Chinese).
[14] NURMOHAMMADI T, ABBASIAN K, AS'ADI M J, et al. Design of an ultrafast all-optical NOR logic gate based on Mach-Zehnder interferometer using quantum-dot SOA[J]. Optik-International Journal for Light and Electron Optics, 2014, 125(15): 4023-4029. doi: 10.1016/j.ijleo.2014.01.119
[15] TALEB H, ABEDI K. Design of a low-power all-optical NOR gate using photonic crystal quantum-dot semiconductor optical amplifiers[J]. Optics Letters, 2014, 39(21): 6237-6240. doi: 10.1364/OL.39.006237
[16] SINGH P, TRIPATHI D K, DIXIT H K. Designs of all-optical NOR gates using SOA based MZI[J]. Optik-International Journal for Light and Electron Optics, 2014, 125(16): 4437-4440. doi: 10.1016/j.ijleo.2014.02.032
[17] GAYEN D K, CHATTOPADHYAY T. Designing of optimized all-optical half adder circuit using single quantum-dot semiconductor optical amplifier assisted Mach-Zehnder interferometer[J]. Journal of Lightwave Technology, 2013, 31(12): 2029-2035. doi: 10.1109/JLT.2013.2263251
[18] GAYEN D K, CHATTOPADHYAY T. Simultaneous all-optical basic arithmetic operations using QD-SOA-assisted Mach-Zehnder interferometer[J]. Journal of Computational Electronics, 2016, 15(3): 982-992.
[19] KOTB A, ALAMER F A. Dispersion on all-optical logic XOR gate using semiconductor optical amplifier[J]. Optical and Quantum Electronics, 2016, 48(6): 1-10.
[20] HU Z, XIANG B, XING Y. Optical gain depending on both size fluctuations of quantum dots and temperature in InGaAs/GaAs QD-SOA[J]. IEEE Transactions on Electron Devices, 2017, 64(9): 3683-3689. doi: 10.1109/TED.2017.2722383