[1] DOERNER M F, NIX W D. Stresses and deformation processes in thin films on substrates [J]. CRC Critical Review in Solid State Science,1988,14(3):225~268.
[2] WINDISCHMANN H. Intrinsic stress scaling for polycrystalline thin films prepered by ion beam sputtering [J]. J A P, 1987,62 (5):1800~1807.
[3] PULKER H K.仲永安,谢于深.玻璃镀膜[M].上海:科学出版社,1988.315.
[4] 田民波,刘德令.薄膜科学与技术手册(上册)[M].北京:机械工业出版社,1991.144~146.
[5] GLANG R, HOLMWOOD R A, LROSENFELD R. Determination of stress on single crystalline silicon substrates [J]. Rev Sci Instr, 1965,36:361~364.
[6] 熊胜明,张云洞,唐晋发.电子束反应蒸发氧化物薄膜的应力特性[J].光电工程,2001,28(1):13~15.
[7] CHUEN L,CHENG Ch L,CHENG Ch J. The measurement of thin film stress using phase shifting intefferometry [J]. Journal of Modern Optics,2000,47 (5):839~849.
[8] HILL R,THOMAS M E R, HARTNET M P. The use of surface profilometers for the measurement of wafer curvature [J]. Vacuum Science and Technology, 1988,6:231~235.
[9] 杨银堂,付俊兴,周端.半导体基片上薄膜应力的测试装置[J].仪器仪表学报,1997,18:228~231.
[10] PIEÑKOS T,GÃDYSZEWSKI L. Determination of strain and stress in thin films using curvature measurements [J]. Review of Scientific Instruments, 1998,69 (2):460~462.