[1] NAKAMURA S.J Cryst Growth,1997,170:11～15.
[2] MORKOC H,STRITE S,GAO G B et al.J A P,1994,76:1363～1398.
[3] STEIGERWALD D A,BHAT J C,COLLINS D et al. IEEE Journal on Selected Topics in Quantum Electronics,2002,8:310～320.
[4] KELLY M K,AMBACHER O,DAHLHEIMER B et al.A P L,1996,69:1749～1752.
[5] WONG W S,SANDS T,CHEUNG N W et al.A P L,1998:72:599～602.
[6] WONG W S,SANDS T,CHEUNG N W et al.A P L,1999,75:1360～1363.
[7] WONG W S,KNEISSL M,MEI P et al.A P L,2001,78:1198～1201.
[8] JOHNSON J W,LAROCHE J,REN F.Solid-State Electron,2001,45:405～410.
[9] MORITA D,SANO M,YAMAMOTO M et al.J A P,2002,41:1434～1436.
[10] KELLY M K,VAUDO R P,PHANSE V M et al.Japan J A P,1999,38:217～219.
[11] STACH E A,KELSCH M,NELSON E C et al.A P L,1999,77:1819～1822.
[12] MARTIN R W,KIM H S,CHO Y et al.Materials Science and Engineering,2002,B93:98～101.
[13] 童玉珍.GaN及其三元化合物的MOCVD生长和性质及蓝光LED的研究.北京大学博士毕业论文,1999.68.
[14] KAWASHIMA T,YOSHIKAWA H,ADACHI S et al.J A P,1997,82:3528～3535.